AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions
Identifieur interne : 000F75 ( Russie/Analysis ); précédent : 000F74; suivant : 000F76AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions
Auteurs : RBID : Pascal:98-0317526Descripteurs français
- Pascal (Inist)
- Etude expérimentale, Croissance cristalline, Epitaxie phase liquide, Aluminium arséniure, Gallium arséniure, Gallium antimoniure, Aluminium antimoniure, Indium arséniure, Indium antimoniure, Mode opératoire, Solvant, Accommodation réseau, Interface croissance, Interface liquide solide, Diagramme phase, 8115L, AlGaAsSb, Al As Ga Sb, AlGaInAsSb, Al As Ga In Sb.
- Wicri :
- concept : Solvant.
English descriptors
- KwdEn :
Abstract
This work is related to the use of Sb as a solvent for the growth of antimony-based solid solutions by LPE. We have developed the growth technology of AlGaAsSb on GaSb substrates. A GaSb solid phase is eroded or melted back in contact with a saturated Al-Ga-As-Sb liquid due to the high non equilibrium degree on this system and the erosion increases with Al concentration. One of the techniques to diminish the erosion consists in increasing the initial supercooling but in this system, in the investigated area of compositions, it is impossible because of the low critical supercooling (ΔTcr) of the liquid phase. We have conceived and developed a method to control ΔTcr by adding In to the liquid phase. It was found that when the In concentration increased the ΔTcr also increased. So the transition from the quaternary AlGaAsSb to the pentanary AlGaInAsSb allowed us to decrease the erosion process. This technique permits to grow high quality multilayer heterostructures based on antimonides.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions</title><author><name sortKey="Mishurnyi, V A" uniqKey="Mishurnyi V">V. A. Mishurnyi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>HCO - UASLP</s1><s2>San Luis Potos, SLP</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>HCO - UASLP</wicri:noRegion></affiliation></author><author><name sortKey="De Anda, F" uniqKey="De Anda F">F. De Anda</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>HCO - UASLP</s1><s2>San Luis Potos, SLP</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>HCO - UASLP</wicri:noRegion></affiliation></author><author><name sortKey="Gorbatchev, A Yu" uniqKey="Gorbatchev A">A. Yu. Gorbatchev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>HCO - UASLP</s1><s2>San Luis Potos, SLP</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>HCO - UASLP</wicri:noRegion></affiliation></author><author><name sortKey="Vasil Ev, V I" uniqKey="Vasil Ev V">V. I. Vasil Ev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A.F. Ioffe Physico-Technical Institute, Russian Academy of Science</s1><s2>St. Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Smirnov, V M" uniqKey="Smirnov V">V. M. Smirnov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A.F. Ioffe Physico-Technical Institute, Russian Academy of Science</s1><s2>St. Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Faleev, N N" uniqKey="Faleev N">N. N. Faleev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A.F. Ioffe Physico-Technical Institute, Russian Academy of Science</s1><s2>St. Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0317526</idno><date when="1998">1998</date><idno type="stanalyst">PASCAL 98-0317526 INIST</idno><idno type="RBID">Pascal:98-0317526</idno><idno type="wicri:Area/Main/Corpus">016D96</idno><idno type="wicri:Area/Main/Repository">017647</idno><idno type="wicri:Area/Russie/Extraction">000F75</idno></publicationStmt><seriesStmt><idno type="ISSN">0232-1300</idno><title level="j" type="abbreviated">Cryst. res. technol. : (1979)</title><title level="j" type="main">Crystal research and technology : (1979)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term><term>Aluminium arsenides</term><term>Crystal growth</term><term>Experimental study</term><term>Gallium antimonides</term><term>Gallium arsenides</term><term>Growth interface</term><term>Indium antimonides</term><term>Indium arsenides</term><term>LPE</term><term>Liquid solid interface</term><term>Mismatch lattice</term><term>Operating mode</term><term>Phase diagrams</term><term>Solvents</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Croissance cristalline</term><term>Epitaxie phase liquide</term><term>Aluminium arséniure</term><term>Gallium arséniure</term><term>Gallium antimoniure</term><term>Aluminium antimoniure</term><term>Indium arséniure</term><term>Indium antimoniure</term><term>Mode opératoire</term><term>Solvant</term><term>Accommodation réseau</term><term>Interface croissance</term><term>Interface liquide solide</term><term>Diagramme phase</term><term>8115L</term><term>AlGaAsSb</term><term>Al As Ga Sb</term><term>AlGaInAsSb</term><term>Al As Ga In Sb</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Solvant</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This work is related to the use of Sb as a solvent for the growth of antimony-based solid solutions by LPE. We have developed the growth technology of AlGaAsSb on GaSb substrates. A GaSb solid phase is eroded or melted back in contact with a saturated Al-Ga-As-Sb liquid due to the high non equilibrium degree on this system and the erosion increases with Al concentration. One of the techniques to diminish the erosion consists in increasing the initial supercooling but in this system, in the investigated area of compositions, it is impossible because of the low critical supercooling (ΔT<sub>cr</sub>) of the liquid phase. We have conceived and developed a method to control ΔT<sub>cr</sub> by adding In to the liquid phase. It was found that when the In concentration increased the ΔT<sub>cr</sub> also increased. So the transition from the quaternary AlGaAsSb to the pentanary AlGaInAsSb allowed us to decrease the erosion process. This technique permits to grow high quality multilayer heterostructures based on antimonides.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0232-1300</s0></fA01><fA02 i1="01"><s0>CRTEDF</s0></fA02><fA03 i2="1"><s0>Cryst. res. technol. : (1979)</s0></fA03><fA05><s2>33</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions</s1></fA08><fA11 i1="01" i2="1"><s1>MISHURNYI (V. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>DE ANDA (F.)</s1></fA11><fA11 i1="03" i2="1"><s1>GORBATCHEV (A. Yu.)</s1></fA11><fA11 i1="04" i2="1"><s1>VASIL'EV (V. I.)</s1></fA11><fA11 i1="05" i2="1"><s1>SMIRNOV (V. M.)</s1></fA11><fA11 i1="06" i2="1"><s1>FALEEV (N. N.)</s1></fA11><fA14 i1="01"><s1>HCO - UASLP</s1><s2>San Luis Potos, SLP</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>A.F. Ioffe Physico-Technical Institute, Russian Academy of Science</s1><s2>St. Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>457-464</s1></fA20><fA21><s1>1998</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13690</s2><s5>354000075620600110</s5></fA43><fA44><s0>0000</s0><s1>© 1998 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>98-0317526</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Crystal research and technology : (1979)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>This work is related to the use of Sb as a solvent for the growth of antimony-based solid solutions by LPE. We have developed the growth technology of AlGaAsSb on GaSb substrates. A GaSb solid phase is eroded or melted back in contact with a saturated Al-Ga-As-Sb liquid due to the high non equilibrium degree on this system and the erosion increases with Al concentration. One of the techniques to diminish the erosion consists in increasing the initial supercooling but in this system, in the investigated area of compositions, it is impossible because of the low critical supercooling (ΔT<sub>cr</sub>) of the liquid phase. We have conceived and developed a method to control ΔT<sub>cr</sub> by adding In to the liquid phase. It was found that when the In concentration increased the ΔT<sub>cr</sub> also increased. So the transition from the quaternary AlGaAsSb to the pentanary AlGaInAsSb allowed us to decrease the erosion process. This technique permits to grow high quality multilayer heterostructures based on antimonides.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Croissance cristalline</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Crystal growth</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>LPE</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Aluminium arséniure</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium antimoniure</s0><s2>NK</s2><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Aluminium antimoniure</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Aluminium antimonides</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium antimoniure</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Mode opératoire</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Operating mode</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="GER"><s0>Verfahrensausfuehrung</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Método operatorio</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Solvant</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Solvents</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Accommodation réseau</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Mismatch lattice</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Acomodación red</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Interface croissance</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Growth interface</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Interfase crecimiento</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Interface liquide solide</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Liquid solid interface</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="GER"><s0>Grenzschicht fluessig fest</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Interfase líquido sólido</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Diagramme phase</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Phase diagrams</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>8115L</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>AlGaAsSb</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Al As Ga Sb</s0><s4>INC</s4><s5>93</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>AlGaInAsSb</s0><s4>INC</s4><s5>94</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Al As Ga In Sb</s0><s4>INC</s4><s5>95</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>17</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>17</s5></fC07><fN21><s1>215</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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